
2N5485 JFET N Channel Transistor
Specifications:
Product Category: Transistors RF JFET
Configuration: Single
Transistor Polarity: N-Channel
Forward Transconductance gFS (Max / Min): 0.0035 S to 0.007 S
Gate-Source Breakdown Voltage: - 25 V
Maximum Drain Gate Voltage: 25 V
Drain Current (Idss at Vgs=0): 200 mA
Power Dissipation: 350 mW Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Minimum Operating Temperature: - 65 C